FQPF630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQU630

200VN-ChannelMOSFET

FQU630

200VLOGICN-ChannelMOSFET

FQU630

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

G630

MicroprocessorResetIC

G630J

N-ChannelEnhancementModePowerMOSFET

Description TheG630Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GBP-A.630

5.2Øx20mm

GDA-630mA

GDASeries,Fast-Acting,CeramicTube

GDA-630mA

5mmx20mmFast-actingceramictubefuses

GDB-630mA

5mmx20mmFast-actingglasstubefuses