首页 >F7413>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TTLHD74/HD74SSeries
| HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
MOSFET Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
GenerationVTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PowerMOSFET(Vdss=30V,Id=12A) SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
GenerationVTechnology | IRF International Rectifier | IRF | ||
ULTARLOWONRESISTANCE | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
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