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FSYA9150D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYA9150R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

HDM9150

FrequencySynthesizer

SHOULDERShoulder

好达电子无锡市好达电子股份有限公司

HV9150

HighVoltageOutputHystereticModeStepUpDC/DCController

GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte

SUTEX

Supertex, Inc

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF9150

iscP-ChannelMOSFETTransistor

•DESCRIPTION •Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.15Ω •

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

Intersil

Intersil Corporation

IRH9150

SimpleDriveRequirements

IRF

International Rectifier

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRF

International Rectifier

详细参数

  • 型号:

    EVM9150

  • 制造商:

    Cooper Crouse-Hinds

供应商型号品牌批号封装库存备注价格
LINX
20+
射频元件
3000
就找我吧!--邀您体验愉快问购元件!
询价
MPS/芯源
2025+
45885
询价
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
询价
PANASONIC/松下
23+
DIP
93000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Panasonic
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Panasonic
20+
N/A
899
加我qq或微信,了解更多详细信息,体验一站式购物
询价
PANASONIC/松下
22+
DIP
222599
原装正品现货,可开13个点税
询价
PANASONIC/松下
25+
DIP
860000
明嘉莱只做原装正品现货
询价
更多EVM9150供应商 更新时间2021-9-14 10:50:00