包装：散装 类别：开发板，套件，编程器 评估板 - 传感器 描述：EVALUATION BOARD FOR MC3672

Memsic Inc.

N-Channel PowerTrench MOSFET

文件：270.98 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=44A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：328.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel UltraFET Trench MOSFET 100V, 44A, 28m?

Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/D

文件：233.67 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体