| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
23A,200V,0.115Ohm,RadHard,N-ChannelPowerMOSFETs Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma -MeetsPre-RadSpecificationsto100KRAD(Si) -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si) -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •27A,200V,RDS(on)=0.1Ω •SecondGenerationRadHardMOSFETResults FromNewDesignConcepts APPLICATIONS Itisspeciallydesignedandprocessedto exhibitminimalcharacteristicchangestototaldoseandneutron exposures.Designandprocessingeffortsarealsodi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
27A,200V,0.100Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
27A,200V,0.100Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
27A,200V,0.100Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Fusetron??FRN-RClassRK5250Vac,125/250Vdc70-600A,dualelement,time-delayfuses | COOPER 科普斯株洲市科普斯科技有限公司 | COOPER | ||
Fusetron??FRN-RClassRK5250Vac,125/250Vdc70-600A,dualelement,time-delayfuses | EATONEaton All Rights Reserved. 伊顿伊顿公司 | EATON | ||
FRS-R??600Vac/300Vdc,65-600A,dualelement,time-delayfuses | EATONEaton All Rights Reserved. 伊顿伊顿公司 | EATON | ||
Fusetron??600VClassRK5 | COOPER 科普斯株洲市科普斯科技有限公司 | COOPER | ||
SubminiatureFuse,11.5x5mm,Quick-ActingF | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
SubminiatureFuse,11.5x5mm,Quick-ActingF | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
SubminiatureFuse,11.5x5mm,Quick-ActingF | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
SubminiatureFuse,11.5x5mm,FlinkF | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
SubminiatureFuse,11.5x5mm,Tr짰eT | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
SubminiatureFuse,11.5x5mm,Time-LagT | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
FSDMSeriesFAST/TTLBufferedSingleOutputDelayLines | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
24A,200V,0.110Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
24A,200V,0.110Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
24A,200V,0.110Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
FSIDMSeriesFAST/TTLBuffered5-TapDelayModules | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
视频输出 （Vid）
- 封装形式：
直插封装
- 极限工作电压：
250V
- 最大电流允许值：
0.05A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
3DG180G,
- 最大耗散功率：
0.8W
- 放大倍数：
- 图片代号：
B-10
- vtest：
250
- htest：
999900
- atest：
.05
- wtest：
.8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
12000 |
询价 | ||||
GS |
07+ |
68000 |
询价 | ||||
NETPOWER |
21+ROHS |
DIP-8 |
33139 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NETPOWER |
DIP-8 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
NETPOWER |
24+ |
Module |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FROLYT |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NETPOWER |
23+ |
DIP |
28611 |
只做原装,专为终端工厂服务,BOM全配。 |
询价 | ||
ICS |
22+23+ |
QFN48 |
29207 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ICS |
20+ |
QFN48 |
25 |
诚信经营..品质保证..价格优势 |
询价 | ||
ICSI |
22+ |
QFN48 |
38 |
原装现货假一赔十 |
询价 |
相关规格书
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- ERS325
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- ERS475
- ESE3005
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- ESM113
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- ESM189M/450...750
- ESM2012DF
- ESM2030DF
- ESM2040D
- ESM2070D
- ESM214
- ESM218
- ESM228M/450...750
- ESM2369
- ESM259
- ESM261
- ESM2808
- ESM282A
- ESM2894
- ESM3001
- ESM3004
- ESM3030DV
- ESM3045AF
- ESM3045D
- ESM3045DV
- ESM400
- ESM4011
- ESM4014
- ESM4016
