型号：ISL9005IRKZ-T；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9005 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • 300mA high performance LDO • Excel

文件：546.02 Kbytes 页数：9 Pages

瑞萨

型号：TPSMBJ160CA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.90188 Mbytes 页数：6 Pages

优恩半导体

型号：TPSMBJ160CA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 页数：3 Pages

鲁光电子

型号：TPSMBJ160CA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 页数：3 Pages

林朋科技

型号：EPA018A；High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

文件：34.3 Kbytes 页数：2 Pages

型号：EPA018A-70；High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 18GHz • TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIV

文件：24.89 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

型号：EPA018B；High Efficiency Heterojunction Power FET

FEATURES • VERY HIGH fmax: 120GHz • +20.0dBm TYPICAL OUTPUT POWER • 13.0dB TYPICAL POWER GAIN AT 18 GHz • TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTR

文件：100.54 Kbytes 页数：3 Pages

型号：EPA018B-70；High Efficiency Heterojunction Power FET

FEATURES • Non-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 11.0 dB Power Gain at 18GHz • Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz • 0.3 x 180 Micron Recessed “Mushroom” Gate • Si3N4 Passivation • Advanced Epitaxial Heterojun

文件：99.43 Kbytes 页数：2 Pages

型号：EPA018BV；High Efficiency Heterojunction Power FET

[Excelics] · VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITA

文件：47.83 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

型号：EPA018BV；High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

文件：46.89 Kbytes 页数：2 Pages