High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

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EXCELICS

High Efficiency Heterojunction Power FET

[Excelics] · VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITA

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High Efficiency Heterojunction Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 11.0 dB Power Gain at 18GHz • Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz • 0.3 x 180 Micron Recessed “Mushroom” Gate • Si3N4 Passivation • Advanced Epit

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EXCELICS

High Efficiency Heterojunction Power FET

Excelics