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F1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11mΩ ID=85A‡ Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

F1010NS

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

FB1010

10Amp.GlassPassivatedBridgeRectifier

[FAGOR] 10Amp.GlassPassivatedBridgeRectifier •GlassPassivatedJunction •ULrecognizedundercomponentindexfilenumberE130180 •Terminals:FASTON① •Terminals:WIRELEADS② •Max.MountingTorque:25Kgxcm LeadandpolarityidentificationsHighsurgecurrentcapability

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

FB1010L

10Amp.GlassPassivatedBridgeRectifier

[FAGOR] 10Amp.GlassPassivatedBridgeRectifier •GlassPassivatedJunction •ULrecognizedundercomponentindexfilenumberE130180 •Terminals:FASTON① •Terminals:WIRELEADS② •Max.MountingTorque:25Kgxcm LeadandpolarityidentificationsHighsurgecurrentcapability

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

FBR1010

SiliconFastRecoveryBridgeRectifier

SiliconFastRecoveryBridgeRectifier

EDAL

Edal Industries, Inc.

FBR1010

FASTRECOVERY

EIC

EIC discrete Semiconductors

FBR1010

FASTRECOVERYBRIDGERECTIFIERS

PRV:50-1000Volts Io:10Amperes FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Fastswitchingforhighefficiency *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC discrete Semiconductors

FGBU1010

10.0AUITRASOFTRECOVERYBRIDGE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

FMT1010R

MotionTrackingModulewithOutputofOrientation,InertialMotionDataandMagneticField

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMT1010T

MotionTrackingModulewithOutputofOrientation,InertialMotionDataandMagneticField

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    ENA1010

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    N-Channel Silicon MOSFET General-Purpose Switching Device Applications

供应商型号品牌批号封装库存备注价格
RFbay
700
询价
rf-bay
24+
模块
400
询价
SIS
23+
BGA
5000
原装正品,假一罚十
询价
SIS
22+
BGA
2000
进口原装!现货库存
询价
SIS
23+
BGA
33888
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
VB
25+
SC-88A
17585
原装正品,假一罚十!
询价
VB
25+
SC-88A
17585
原装正品,假一罚十!
询价
VBSEMI/台湾微碧
23+
SC-88A
50000
全新原装正品现货,支持订货
询价
VBSEMI/台湾微碧
24+
SC-88A
60000
询价
BOUR
23+
1010
询价
更多ENA1010供应商 更新时间2025-7-28 10:07:00