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EN29LV800T70RTI

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RTIP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RS

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RSI

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RSIP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RSP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RT

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

EN29LV800T70RTP

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EONEon Silicon Solution Inc.

宜扬科技宜扬科技股份有限公司

供应商型号品牌批号封装库存备注价格
EON
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
cFeon
2020+
BGA
250
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
cFeon
24+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
cFeon
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
cFeon
25+
BGA
50
原装正品,假一罚十!
询价
CFEON
23+
TSOP
1800
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
CFEON
2016+
TSSOP48
6523
房间原装进口现货假一赔十
询价
CFEON
01+
TSOP
3560
全新原装进口自己库存优势
询价
CFEON
23+
TSOP
7635
全新原装优势
询价
CFEON
17+
TSOP
9988
只做原装进口,自己库存
询价
更多EN29LV800T70RTI供应商 更新时间2025-5-16 16:33:00