首页 >EN29LV800T70RTIP>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
EN29LV800T70RTIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 文件:239.4 Kbytes 页数:43 Pages | EON 宜扬科技 | EON | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 文件:239.4 Kbytes 页数:43 Pages | EON 宜扬科技 | EON | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 文件:239.4 Kbytes 页数:43 Pages | EON 宜扬科技 | EON | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 文件:239.4 Kbytes 页数:43 Pages | EON 宜扬科技 | EON | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 文件:239.4 Kbytes 页数:43 Pages | EON 宜扬科技 | EON |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
cFeon |
25+ |
BGA |
250 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
cFeon |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
cFeon |
25+ |
BGA |
50 |
原装正品,假一罚十! |
询价 | ||
cFeon |
25+ |
BGA |
50 |
原装正品,假一罚十! |
询价 | ||
cFeon |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
CFEON |
23+ |
TSOP |
1800 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
CFEON |
01+ |
TSOP |
3560 |
全新原装进口自己库存优势 |
询价 | ||
CFEON |
24+ |
TSOP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
XTW |
24+ |
QFN |
28380 |
绝对原厂支持只做自己现货优势 |
询价 | ||
TSSOP |
2447 |
TSSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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