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EN29LV800T70RTIP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件:239.4 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV800T70RTP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件:239.4 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV800T70RS

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件:239.4 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV800T70RSI

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件:239.4 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV800T70RSIP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件:239.4 Kbytes 页数:43 Pages

EON

宜扬科技

供应商型号品牌批号封装库存备注价格
cFeon
25+
BGA
250
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
cFeon
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
cFeon
25+
BGA
50
原装正品,假一罚十!
询价
cFeon
25+
BGA
50
原装正品,假一罚十!
询价
cFeon
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
CFEON
23+
TSOP
1800
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
CFEON
01+
TSOP
3560
全新原装进口自己库存优势
询价
CFEON
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
XTW
24+
QFN
28380
绝对原厂支持只做自己现货优势
询价
TSSOP
2447
TSSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多EN29LV800T70RTIP供应商 更新时间2025-10-6 13:58:00