8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件：239.4 Kbytes 页数：43 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件：239.4 Kbytes 页数：43 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件：239.4 Kbytes 页数：43 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5

文件：239.4 Kbytes 页数：43 Pages

EON

宜扬科技