EN25P10-100GCP数据手册EON中文资料规格书

描述 Description

GENERAL DESCRIPTION
The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow either single Sector at a time or full chip erase operation. The EN25P10 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector.FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
•High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- Four 32-Kbyte sectors

特性 Features

• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
•High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- Four 32-Kbyte sectors