零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EMC |
SOT-23 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
EMC杰力 |
20+ |
SOT-23 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
杰力科技 |
2019+PB |
SOT-23 |
96000 |
原装正品 可含税交易 |
询价 | ||
EMC |
36118 |
SOT23-3 |
2015 |
专业代理MOS管,型号齐全,公司优势产品 |
询价 | ||
excelliancemos |
23+ |
. |
53000 |
原装正品现货 |
询价 | ||
23+ |
N/A |
85300 |
正品授权货源可靠 |
询价 | |||
杰力科技 |
19+ |
SOT-23 |
200000 |
询价 | |||
EMC杰力 |
2018+ |
SOT23-3 |
363365 |
MOS管大量供应优势产品 |
询价 | ||
EMC |
20+ |
SOT-23-3 |
63258 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
EMC杰力 |
23+ |
SOT23-3 |
363365 |
MOS管大量供应优势产品 |
询价 |
相关规格书
更多- EMB80P03G
- EMB80P03JS
- EMB-830
- EMB-852T
- EMB8S
- EMB9
- EMB9
- EMB-900M
- EMB90N08A
- EMB90N08V
- EMB90P06CS
- EMB-9458T
- EMB-9458T_15
- EMB-9459T
- EMB-945T
- EMB-945T_15
- EMB-9658T
- EMB9930G
- EMB9T2R
- EMBA0N10A
- EMBA0N10F
- EMBA0N10S
- EMBA2N10A
- EMB-A50M
- EMB-A50M_15
- EMBA5C10A
- EMBA5N10A
- EMBA5N10G
- EMBA5P06J
- EMB-A70M
- EMB-APL3
- EMB-APL3-A11-4200-F1-LV
- EMBB0N10J
- EMBB0P10A
- EMBB5N10P
- EMBB5N15A
- EMB-B75B
- EMB-B75B_15
- EMB-BSW1
- EMB-BSW1-A10-3710-HHL
- EMBBSW2-A10-3060
- EMB-BT2
- EMB-BT7
- EMBC-3000
- EMB-CV1
相关库存
更多- EMB80P03J
- EMB80P03VAT
- EMB-845M
- EMB8F
- EMB9
- EMB9
- EMB9
- EMB90A08G
- EMB90N08G
- EMB90P06A
- EMB90P06G
- EMB-9458T
- EMB-9459T
- EMB-9459T_15
- EMB-945T
- EMB-9658T
- EMB-9658T_15
- EMB99A0G
- EMBA0A10G
- EMBA0N10CS
- EMBA0N10G
- EMBA1N10Q
- EMBA3P03JS
- EMB-A50M
- EMBA5A10G
- EMBA5C10G
- EMBA5N10CS
- EMBA5N10V
- EMBA5P06P
- EMB-APL1
- EMB-APL3-A11-3350-F1-LV
- EMBB0N10A
- EMBB0N10V
- EMBB5B10G
- EMBB5N10Q
- EMB-B75A
- EMB-B75B
- EMB-B75B-A10
- EMB-BSW1-A10-3060-HHL
- EMB-BSW2
- EMB-BT1
- EMB-BT4
- EMBC-2000
- EMB-CV1
- EMB-CV1_15