EMB80N03J规格书应用电路贸易商杰力科技-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
EMB80N03J	文件：214.58 Kbytes Page：5 Pages	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 80mΩ ID 2.5A Pb‐Free Lead Plating & Halogen Free 文件：214.58 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMB80N03J	文件：300 bytes Page：1 Pages	Power MOSFETs-N Channel	Excelliance MOS 杰力科技	Excelliance MOS
FIR80N03LG	文件：5.29327 Mbytes Page：7 Pages	30V N-Channel Mosfet 文件：5.29327 Mbytes 页数：7 Pages	FOSTER 福斯特半导体	FOSTER
G80N03K	文件：648.41 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G80N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：648.41 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G80N03KA	文件：875.45 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G80N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：875.45 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多EMB80N03J供应商更新时间2025-10-6 14:01:00