RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

RFP12N06RLE

N-Channel60V(D-S)MOSFET

SDP12N06

N-Channel650V(D-S)PowerMOSFET

SG12N06DP

DiscreteIGBTs

SG12N06DP

DiscreteIGBTs

SG12N06DT

DiscreteIGBTs

SG12N06DT

DiscreteIGBTs

SG12N06P

DiscreteIGBTs