首页 >EM8551LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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ESDProtectionDiodes | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TheG8551isdesignedforusein2WoutputamplifierofportableradiosinclassBpush-pulloperation. | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheG8551isdesignedforusein2WoutputamplifierofportableradiosinclassBpush-pulloperation. Features *HighCollectorcurrent(IC:1.5A) *ComplementarytoG8051 | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
NPEPITAXIALSILICONTRANSISTOR LOWVOLTAGEHIGHCURRENTSMALLSIGNALPNPTRANSISTOR Description TheG8551isalowvoltagehighcurrentsmallsignalPNPtransistor,designedforClassBpush-pullaudio amplifierforportableradioandgeneralpurposeapplications. Features *Collectorcurrentupto700mA | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
LOWVOLTAGEHIGHCURRENTSMALLSIGNALPNPTRANSISTOR | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
1.8MHZZero-DriftCMOSRail-to-RailIOOpampwithRFFilter Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12 | GAINSILGainsil Semiconductor Technology 聚洵聚洵半导体科技（上海）有限公司 | GAINSIL | ||
1.8MHZZero-DriftCMOSRail-to-RailIOOpampwithRFFilter Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12 | GAINSILGainsil Semiconductor Technology 聚洵聚洵半导体科技（上海）有限公司 | GAINSIL | ||
1.8MHZZero-DriftCMOSRail-to-RailIOOpampwithRFFilter Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12 | GAINSILGainsil Semiconductor Technology 聚洵聚洵半导体科技（上海）有限公司 | GAINSIL | ||
LOWVOLTAGEHIGHCURRENTSMALLSIGNALPNPTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheHE8551isdesignedforusein2WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation(PT:2W,TC=25°C) •HighCollectorCurrent(IC:1.5A) •ComplementarytoHE8051 | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC |
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