EU1010-XX-SUT

8-bitMCUwith10-bitA/DConverter

EU1010-XX-SUT

8-bitMCUwith10-bitA/DConverter

EU1010-XX-SUU

8-bitMCUwith10-bitA/DConverter

EU1010-XX-SUU

8-bitMCUwith10-bitA/DConverter

EVB-ES1010SI

12VHot-SwapPowerDistributionControllers

EYGS1010ZLME

Soft-PGS(CompressibleType)PGSwithlowthermalresistance

F1010E

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

•AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

F1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11mΩ ID=85A‡ Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

F1010NS

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

FB1010

10Amp.GlassPassivatedBridgeRectifier

[FAGOR] 10Amp.GlassPassivatedBridgeRectifier •GlassPassivatedJunction •ULrecognizedundercomponentindexfilenumberE130180 •Terminals:FASTON① •Terminals:WIRELEADS② •Max.MountingTorque:25Kgxcm LeadandpolarityidentificationsHighsurgecurrentcapability