| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
LowOn-resistance,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS | ANADIGICS | ||
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORDStanford Microdevices Stanford Microdevices | STANFORD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
130MHz,1.25mARRIOOperationalAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
2007 |
DIRECTFET |
182 |
原装现货海量库存欢迎咨询 |
询价 | ||
23+ |
N/A |
13150 |
正品授权货源可靠 |
询价 | |||
IOR |
23+ |
DIRECTFET |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
22+ |
DIRECTFET |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
2023+ |
DIRECTFET |
8700 |
原装现货 |
询价 | ||
IR |
23+ |
DIRECTFET |
8000 |
只做原装现货 |
询价 | ||
B&B |
22+ |
NA |
80 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
GOODSKY |
2023+环保现货 |
专业继电器 |
6800 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
TOYODA |
22+ |
LED |
8000 |
原装正品支持实单 |
询价 | ||
TOYODA |
24+25+/26+27+ |
车规-LED.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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