ESDS312

Data-LineSurgeandESDProtectionDiodeArray

ESDS312

Data-LineSurgeandESDProtectionDiodeArray

ESDS312

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

ESDS312DBVR

Data-LineSurgeandESDProtectionDiodeArray

ESDS312DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

EVAL-ADXL312Z

3-Axis,짹1.5g/짹3g/짹6g/짹12gDigitalAccelerometer

GENERALDESCRIPTION TheADXL3121isasmall,thin,lowpower,3-axisaccelerometer withhighresolution(13-bit)measurementupto±12g.Digital outputdataisformattedas16-bittwoscomplementandis accessiblethrougheitheraserialportinterface(SPI)(3-or4-wire) orI2Cdigitalint

EW312

1/8WATTMETAL

FDG312P

P-Channel2.5VSpecifiedPowerTrench??MOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FGT312

SelectionGuide

SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S

FMMT312

2-PACKMOSFETMODULE