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E-TDA7478AD

SINGLECHIPRDSDEMODULATOR

DESCRIPTION TheTDA7478recoverstheadditionalinaudibleRDSinformationwhichistransmittedbyFMradiobroadcastingstationsandoperatesinaccordancewiththeEBU(EuropeanBroadcastingUnion)specifications. FEATURES ■VERYHIGHRDSDEMODULATIONQUALITYWITHIMPROVEDDIGITALSIGNA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF7478

PowerMOSFET(Vdss=60V)

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF7478

N-Ch60VFastSwitchingMOSFETs

100%EASGuaranteed GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRF7478PBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF7478PBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRF7478PBF

SMPSMOSFET

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRF7478QPBF

SMPSMOSFET

Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa

IRF

International Rectifier

IRF7478QPBF

AdvancedProcessTechnology

Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa

IRF

International Rectifier

IRF7478QTRPBF

AdvancedProcessTechnology

Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa

IRF

International Rectifier

IRF7478TRPBF

HighfrequencyDC-DCconverters

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

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