首页 >EDA7478AD>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SINGLECHIPRDSDEMODULATOR DESCRIPTION TheTDA7478recoverstheadditionalinaudibleRDSinformationwhichistransmittedbyFMradiobroadcastingstationsandoperatesinaccordancewiththeEBU(EuropeanBroadcastingUnion)specifications. FEATURES ■VERYHIGHRDSDEMODULATIONQUALITYWITHIMPROVEDDIGITALSIGNA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PowerMOSFET(Vdss=60V) Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
N-Ch60VFastSwitchingMOSFETs 100%EASGuaranteed GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier | IRF | ||
SMPSMOSFET Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier | IRF | ||
SMPSMOSFET Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesebenefitscombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. TheefficientSO-8pa | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier | IRF |
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