首页 >ED3P03>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)125mΩ ID‐3.1A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
DUALTMOSPOWERMOSFET30VOLTS MediumPowerSurfaceMountProducts TMOSDualP-ChannelFieldEffectTransistors DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplicationswherep | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DUALBIPOLARPOWERTRANSISTORPNPSILICON30VOLTS3AMPERES PlasticPowerTransistors SO–8forSurfaceMountApplications •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =140(Min)@IC=1.2Adc =125(Min)@IC=3.0Adc •LowCollector–EmitterSaturationVoltage—VCE(sat) | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PlasticPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SINGLETMOSPOWERFET3.0AMPERES30VOLTS MediumPowerSurfaceMountProducts TMOSP-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance. | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
Nch100V35APowerMOSFET Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree Application Switching | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrentID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedsw | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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