2 Watt, High Linearity InGaP HBT Amplifier

文件：194.19 Kbytes 页数：3 Pages

WJCI

2 Watt, High Linearity InGaP HBT Amplifier

文件：194.19 Kbytes 页数：3 Pages

WJCI

2 Watt, High Linearity InGaP HBT Amplifier

文件：194.19 Kbytes 页数：3 Pages

WJCI

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

文件：34.58 Kbytes 页数：2 Pages

POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：222.06 Kbytes 页数：3 Pages

MOSPEC

统懋