SP203中文资料POLYFET数据手册PDF规格书

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Polyfet™ process features low feedback and output capacitances resulting in high Fj transistors with high input impedance and high efficiency.

• SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

• 12.0 Watts Single Ended Package Style AP

• HIGH EFFICIENCY, LINEAR

• HIGH GAIN, LOW NOISE