SP203

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeatureslowfeedbackandoutputcapacitances

SP203_14

RF POWER VDMOS TRANSISTOR

SP2030

Dual N-Channel Enhancement Mode Field Effect Transistor

SPLRL203CVT

Roundpushbuttonswitch,5millioncycles,optionalLED

SPLRL203VAT

Roundpushbuttonswitch,5millioncycles,optionalLED

SR203

SCHOTTKYBARRIERRECTIFIERS(2.0A,20-60V)

UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprotectiondiodes.

SR203

2AmpSchottkyBarrierRectifier20-60Volts

Features •GuardRingProtection •LowForwardVoltageDrop •LowPowerLossforHighEfficiency •ReverseEnergyTested •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivit

SR203

2.0AMPS.SchottkyBarrierRectifiers

Features ◇Lowpowerloss,highefficiency. ◇Highcurrentcapability,LowVF. ◇Highreliability ◇Highsurgecurrentcapability. ◇Epitaxialconstruction. ◇Guard-ringfortransientprotection. ◇Foruseinlowvoltage,highfrequency inventor,freewheeling,andpolarity protecti

SR203

2.0AMPS.SchottkyBarrierRectifiers

SR203

SCHOTTTKYBARRIERRECTIFIER

VOLTAGERANGE20to100VoltsCURRENT2.0Ampere FEATURES •Fastswitching •Lowforwardvoltage •Lowpowerlossforhighefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed250℃/10seconds,0.375”(9.5mm)leadlength