首页 >EC2C01HM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
5TO6WATTDC-DCCONVERTERS | RSGRSG Electronic Components GmbH RSG电子元件有限公司 | RSG | ||
VCXO&VHFBandVCOApplicationsVaractorDiode SiliconDiffused-JunctionType Features •Highcapacitanceratio.CR(C1.0V/C4.0V)=5.0typ •Ultrasmall-sizedpackage(1008),slimpackage (0.6mm),leadlesspackage. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120to400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
ComplementarySO??,DualPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYDUALTMOSPOWERFET2.0AMPERES12VOLTS MediumPowerSurfaceMountProducts ComplementaryTMOSFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.The | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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