G1324

ForPanels.250(6,4mm)to.375(9,5mm)Thick

G1324

ThickPanelRubberGrommets

HO1324

640.0MHzSAWOscillator

Thisgeneral-purposeoscillatorisstabilizedbysurface-acoustic-wave(SAW)technology.Fundamentaloscillationat640.0MHzeliminatesallinternallygeneratedspuriousoutputsexceptintegralharmonicsof640.0MHz.Thecompactsizeoftherugged,metal,hermetically-sealedcasemakesthisosci

HX1324FNL

MDL,SIN,100D,1:1,SM,TU

HX1324NL

MDL,SIN,100D,1:1,SM,OH

IIRF1324

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF1324

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF1324LPBF

HEXFETPowerMOSFET

Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow

IRF1324PBF

HEXFET

PowerMOSFET

Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPowe

IRF1324SLPBF

HighEfficiencySynchronousRectificationinSMPS