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HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
Easy
22+
NA
10
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询价
CARLO GAVAZZI
2450+
SOP
6540
只做原厂原装正品终端客户免费申请样品
询价
INT
24+
1291
询价
飞恩微电子
23+
NA
5800
飞恩微传感器全系在售
询价
飞恩微电子
23+
NA
60000
专业配单,原装正品假一罚十,代理渠道价格优
询价
ADAM-TECH
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
EMW
25+
ROHS
880000
明嘉莱只做原装正品现货
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DALE (VISHAY)
0425
55
公司优势库存 热卖中!
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VISHAY
20+
连接器
493
就找我吧!--邀您体验愉快问购元件!
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VishayDale
355
全新原装 货期两周
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更多EBSP1310MXG-D供应商 更新时间2025-7-29 10:09:00