丝印：E4M0025075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 750V SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr)

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分立式碳化硅肖特基二极管

750 V, 25 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET • Automotive Qualified (AEC-Q101) and PPAP capable\n• High breakdown voltage across entire operating temperature range\n• High-speed switching with low output capacitance\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr);

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