E4M0060075K1

丝印：E4M0060075K1；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant •AutomotiveQualified(AEC-Q101)andPPAPCapable

E4M0060075K1

分立式碳化硅肖特基二极管; • Automotive Qualified (AEC-Q101) and PPAP capable\n• High breakdown voltage across entire operating temperature range\n• High-speed switching with low output capacitance\n• High blocking voltage with low RDS(on)\n• Fast intrinsic diode with low reverse recovery (Qrr)\n;

750 V, 60 mΩ, TO-247-4 LP package, Automotive qualified, Discrete SiC MOSFET