| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
PowerMOSFET(Vdss=500V,Rds(on)typ.=0.087ohm,Id=46A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dt Ruggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ●LowTrrandSoftDiodeRecovery ●HighPerformanceOptimisedAnti-parallelDiode Applications | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedfor ExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDrive Requirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoise Immunity •Compliant | VishayVishay Siliconix 威世科技 |  | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedfor ExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDrive Requirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoise Immunity •Compliant | VishayVishay Siliconix 威世科技 | | ||
HiPerFETPowerMOSFETsQ-Class | IXYS IXYS Integrated Circuits Division |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=140mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HiPerFETPowerMOSFETsQ-Class | IXYS IXYS Integrated Circuits Division | | ||
HighCurrentPowerMOSFETQ-Class | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedfor ExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDrive Requirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoise Immunity •Compliant | VishayVishay Siliconix 威世科技 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
MODULE |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
22+ |
MODULE |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST/意法 |
23+ |
MODULE |
1050 |
原装正品,价格优势 |
询价 | ||
ST |
22+ |
MODULE |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST |
23+ |
模块 |
420 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
ST |
23+ |
模块 |
3562 |
询价 | |||
St |
23+ |
模块 |
18000 |
询价 | |||
ST |
23+ |
原厂原装 |
1014 |
全新原装现货 |
询价 | ||
ST |
23+ |
模块 |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
6000 |
面议 |
19 |
 专营模块 |
询价 |
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