首页 >E20007>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GaAsVaractorDiodesAbruptJunction Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
30Watts,935-960MHzCellularRadioRFPowerTransistor Description The20007isaclassAB,NPN,commonemitterRFpowertransistorintendedfor24Vdcoperationacrossthe935to960MHzfrequencyband.Ratedat30wattsminimumoutputpower,itmaybeusedforbothCWandPEPapplications.Ionimplantation,nitridesurfacepassivationandgoldmeta | EricssonEricsson Microelectronics 爱立信爱立信公司 | Ericsson | ||
ADAPTER-18W | VOLGEN Volgen America/Kaga Electronics USA | VOLGEN | ||
SCRTrigger&ControlTransformer | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
SCRTriggerandControlTransformers | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
SENDUSTTOROIDALPOWERINDUCTORS | PMI Premier Magnetics, Inc. | PMI | ||
LOWCOSTTOROIDALPOWERINDUCTORS | PMI Premier Magnetics, Inc. | PMI |
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