PESD30VF1BSF

Marking：E1；Package：SOD962-2；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiode,partofthe TrEOSprotectionfamily.ThisdeviceishousedinaDSN0603-2(SOD962-2)leadlessultrasmall Surface-MountedDevice(SMD)package,designedtoprotectonesignallinefrom

PESD3V3L5UV

Marking：E1；Package：SOT666；Low capacitance unidirectional fivefold ESD protection diode arrays

1.1Generaldescription LowcapacitanceunidirectionalfivefoldElectroStaticDischarge(ESD)protectiondiode arraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectupto fiveunidirectionalsignallinesfromthedamagecausedbyESDandothertransients. 1.2Featur

PESD3V3S2UQ

Marking：E1；Package：SOT663；Double ESD protection diodes in SOT663 package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

PESD3V3S5UD

Marking：E1；Package：SC-74；Fivefold ESD protection diode arrays

1.1Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearraysinaSOT457(SC-74)small Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptofivesignallines fromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications nESDpr

PESD3V3S5UD-Q

Marking：E1；Package：SOT457；Fivefold ESD protection diode array

1.Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearrayinaSOT457(SC-74)smallSurface- MountedDevice(SMD)plasticpackage,designedtoprotectuptofivesignallinesfromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits •ESDprotecti

PESD5V0L5UY

Marking：E1；Package：SOT-666；ESD protection of up to five lines

Description Lowcapacitanceunidirectionalfivefold ElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-Mounted Device(SMD)plasticpackagesdesigned toprotectuptofiveunidirectionalsignal linesfromthedamagecausedbyESD andothertransients. Features ESDpr

PMEG2010EA

Marking：E1；Package：SOD323；Low VF (MEGA) Schottky barrier diode

FEATURES •Forwardcurrent:1A •Reversevoltage:20V •Ultrahigh-speedswitching •Verylowforwardvoltage •VerysmallplasticSMDpackage. APPLICATIONS •Ultrahigh-speedswitching •Voltageclamping •Protectioncircuits. DESCRIPTION PlanarMaximumEfficiencyGeneralApplication(ME

PMEG2010EA-Q

Marking：E1；Package：SOD323；20 V, 1 A low VF Schottky barrier diode

1.Generaldescription PlanarSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulatedina SOD323(SC-76)verysmallSMDplasticpackage. 2.Featuresandbenefits •Forwardcurrent:1A •Reversevoltage:20V •Ultrahigh-speedswitching •Verylowforwar

PMEG60T20ELP

Marking：E1；Package：CFP5；60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤6

PMEG60T20ELP-Q

Marking：E1；Package：CFP5；60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤6