MMSZ5231B

Marking：E1；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.4V–51VNominalZenerVoltage 5StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

MMSZ5231B

Marking：E1；Package：SOD-123；ZENER DIODES

PlanarDieConstruction 500mWPowerDissipation 2.4V-75VStandoffVoltage 5NominalZenerVoltage DesignedforSurfaceMountApplication PlasticMaterial-ULRecognitionFlammability Classification94V-O ThisisaHalogenFreeDevice AllSMCpartsaretraceabletothewaferlot Additional

MMSZ5231B

Marking：E1；Package：SOD-123；SOD-123 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage Generalpurpose,MediumCurrent 350mWPowerDissipationOnCeramicPBC IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5231BS

Marking：E1；Package：SOD-323；Silicon Planar Zener Diodes

Features Totalpowerdissipation:Max.500mW. Widezenerreversevoltagerange2.4Vto39V. Smallplasticpackagesuitableforsurfacemounteddesign. Toleranceapproximately±5

MMSZ5231BS

Marking：E1；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5231BS

Marking：E1；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

PBSS4330PAS

Marking：E1；Package：DFN2020D-3；30 V, 3 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. PNPcomplement:PBSS5330PAS Featu

PBSS4330PAS-Q

Marking：E1；Package：DFN2020D-3；30 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmall Surface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleand soldarablesidepads. PNPcomplement:PBSS5330PAS 2.Featuresandbenefits •Lowcol

PDTC143EM

Marking：E1；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143EM 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesig

PDTD113EK

Marking：E1；Package：SC-59A；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance