EMH2301

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •TheEMH2301incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive.

EMQ-I2301

IntelAtomE3800seriesprocessorQseven??CPUModule

FCI2301

P-ChannelHigh-DensityTrenchMOSFET

FKUC2301

3P-Ch20VFastSwitchingMOSFETs

Description TheFKUC2301isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKUC2301meettheRoHSandGreen Productrequirementwithfullfunctionreliability approved.

FKVA2301

P-Ch20VFastSwitchingMOSFETs

Features AdvancedTrenchMOSTechnology LowGateCharge GreenDeviceAvailable Applications LoadSwitchforPortableDevices.

FLI2301

DigitalVideoFormatConverter

FMS2301

20VP-ChannelEnhancementModeMOSFET

Features •RDS(ON)≦110mΩ@VGS=-4.5V •RDS(ON)≦150mΩ@VGS=-2.5V •SuperhighdensitycelldesignforextremelylowRDS(ON) •IncompliancewithEURoHS2002/95/ECdirectives. •Suffix-HindicatesHalogen-freepart,ex.FMS2301-H. Case:Moldedplastic,SOT-23

FMS2301A

P-ChannelSMDMOSFET

Features •Suffix-HindicatesHalogen-freepart,ex.FMS2301A-H. •RDS(ON)≦75mΩ@VGS=-4.5V •RDS(ON)≦95mΩ@VGS=-2.5V •SuperhighdensitycelldesignforextremelylowRDS(ON) •IncompliancewithEURoHS2002/95/ECdirectives. •Exceptionalon-resistanceandmaximumDCcurrentcapabilit

FMT2301S

2.6Amps20VoltageP-ChannelPOWERMOSFET

FP2301F

P-ChannelEnhancementMOSFET

Features VDS=-20V,ID=-1.6A RDS(ON)=380mΩ@VGS=-4.5V(Typ.) RDS(ON)=520mΩ@VGS=-2.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement