20V P-Channel Enhancement Mode MOSFET

Features • RDS(ON) ≦ 110mΩ@VGS =-4.5V • RDS(ON) ≦ 150mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Suffix -H indicates Halogen-free part, ex.FMS2301-H. Case : Molded plastic, SOT-23

文件：563.81 Kbytes 页数：8 Pages

FORMOSA

美丽微半导体

P-Channel SMD MOSFET

Features • Suffix -H indicates Halogen-free part, ex.FMS2301A-H. • RDS(ON) ≦ 75mΩ@VGS =-4.5V • RDS(ON) ≦ 95mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Exceptional on-resistance and maximum DC current capabilit

文件：377.61 Kbytes 页数：8 Pages

FORMOSA

美丽微半导体

Mosfets

FormosaMS

美丽微半导体

2.6Amps 20 Voltage P - Channel POWER MOSFET

文件：407.13 Kbytes 页数：4 Pages

FCI

富加宜

P-Cha nnel Enhancement MOSFET

Features  VDS=-20V, ID=-1.6A  RDS(ON)=380mΩ@VGS=-4.5V(Typ.)  RDS(ON)=520mΩ@VGS=-2.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：191.94 Kbytes 页数：4 Pages

GWSEMI

唯圣电子