DTFA014TS规格书库存现货达尔科技第10页-114ic电子网

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IRFR014	文件：4.2849 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR014	文件：1.92902 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014	文件：1.92902 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014	文件：1.768 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014	文件：287.41 Kbytes Page：5 Pages	N-CHANNELPOWERMOSFET	SamsungSamsung Group 三星三星半导体	Samsung
IRFR014	文件：172.07 Kbytes Page：6 Pages	PowerMOSFET(Vdss=60V,Rds(on)=0.20Ohm,Id=7.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR014	文件：321.17 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR014	文件：892.51 Kbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRFR014,SiHFR014) •Straightlead(IRFU014,SiHFU014) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014A	文件：218.75 Kbytes Page：7 Pages	ADVANCEDPOWERMOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=60V ♦LowerRDS(ON):0.097Ω(Typ.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFR014PBF	文件：2.0989 Mbytes Page：10 Pages	HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR014PBF	文件：1.768 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014PBF	文件：1.92902 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014PBF	文件：4.2849 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR014PBF	文件：892.51 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014TR	文件：4.2849 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR014TR	文件：1.768 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014TR	文件：1.92902 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014TRL	文件：1.92902 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR014TRL	文件：4.2849 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR014TRL	文件：1.768 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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详细参数

型号：
DTFA014TS
制造商：
Acme Electric Corporation XXX
功能描述：
, Drive Isolation Transformer , Three Phase, 60 Hz , 230 Delta Primary Volts , 2

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	DTG016A	DAWINTECH	21+ROHS	BGA	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市科恒伟业电子有限公司	DTG016A	DAWINTECH	23+	BGA	6500	只做原装正品现货!或订货假一赔十!	询价
深圳市一线半导体有限公司	DTG01S01	DENMOS	2008++	SMD	7748	新进库存/原装	询价
深圳市惊羽科技有限公司	DTG01S01	DENMOS	24+25+/26+27+	SMD-贴片	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市科思奇电子科技有限公司	DTG110	G	20+	TO	6000	只做原装现货特价出售	询价
深圳市星宇佳科技有限公司	DTG110	G	82+	TO	288	原装现货支持BOM配单服务	询价
上海金庆电子技术有限公司	DTG-110	DELCO	新		10	全新原装货期两周	询价
深圳市华博特电子有限公司	DTG143XG-AE3-R	UTC	23/22+	SOT23	6000	20年老代理.原厂技术支持	询价
深圳市汇莱威科技有限公司	DTG144EETL	ROHM/罗姆		SOT-23	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	DTG144EETL	ROHM/罗姆	23+	SOT-23	50000	全新原装正品现货,支持订货	询价

更多DTFA014TS供应商更新时间2024-6-14 16:04:00

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