首页 >DS3708S-COA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤12mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)max=12mohm,Id=62A) Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverters withSynchronousRectificationforTelecom andIndustrialUse ●HighFrequencyBuckConvertersfor Comput | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤12mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighFrequencyBuckConvertersforComputerProcessorPower | IRF International Rectifier | IRF | ||
HighFrequencyDC-DCIsolatedConverters Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverters withSynchronousRectificationforTelecom andIndustrialUse ●HighFrequencyBuckConvertersfor Comput | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighFrequencyBuckConvertersforComputerProcessorPower | IRF International Rectifier | IRF | ||
SMPSMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverters withSynchronousRectificationforTelecom andIndustrialUse ●HighFrequencyBuckConvertersfor Comput | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=30V,Rds(on)max=12mohm,Id=62A) Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverters withSynchronousRectificationforTelecom andIndustrialUse ●HighFrequencyBuckConvertersfor Comput | IRF International Rectifier | IRF | ||
SMPSMOSFETHEXFET짰PowerMOSFET | IRF International Rectifier | IRF |
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