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DS26C32ATMXSLASHNOPB

DS26C32AT/DS26C32AMQuadDifferentialLineReceiver

1FEATURES 2•CMOSDesignforLowPower •±0.2VSensitivityoverInputCommonMode VoltageRange •TypicalPropagationDelays:19ns •TypicalInputhysteresis:60mV •InputsWon'tLoadLineWhenVCC=0V •MeetstheRequirementsofEIAStandardRS-422 •TRI-STATEOutputsforConnectionto

TI2Texas Instruments

德州仪器美国德州仪器公司

DS26C32ATMXSLASHNOPB

DS26C32AT/DS26C32AMQuadDifferentialLineReceiver

TITexas Instruments

德州仪器美国德州仪器公司

DS26C32ATMXSLASHNOPB.A

DS26C32AT/DS26C32AMQuadDifferentialLineReceiver

1FEATURES 2•CMOSDesignforLowPower •±0.2VSensitivityoverInputCommonMode VoltageRange •TypicalPropagationDelays:19ns •TypicalInputhysteresis:60mV •InputsWon'tLoadLineWhenVCC=0V •MeetstheRequirementsofEIAStandardRS-422 •TRI-STATEOutputsforConnectionto

TI2Texas Instruments

德州仪器美国德州仪器公司

DS26C32ATN

QuadDifferentialLineReceiver

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

HD26C32A

QuadrupleDifferentialLineReceiversWith3StateOutputs

HitachiHitachi Semiconductor

日立日立公司

HD26C32A

QuadrupleDifferentialLineDriversWith3StateOutputs

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HD26C32AFPEL

QuadrupleDifferentialLineDriversWith3StateOutputs

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HD26C32AP

QuadrupleDifferentialLineDriversWith3StateOutputs

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HS-26C32RH

RadiationHardenedQuadDifferentialLineReceiver

TheIntersilHS-26C32RHisadifferentiallinereceiverdesignedfordigitaldatatransmissionoverbalancedlinesandmeetstherequirementsofEIAStandardRS-422.RadiationhardenedCMOSprocessingassureslowpowerconsumption,highspeed,andreliableoperationinthemostsevereradiationen

Intersil

Intersil Corporation

HS-26C32RH

RadiationHardenedQuadDifferentialLineReceivers

Features •ElectricallyscreenedtoSMD#5962-95689 •QMLqualifiedperMIL-PRF-38535requirements •1.2micronradiationhardenedCMOS •EIARS-422compatibleinputs •CMOScompatibleoutputs •Inputfail-safecircuitry •Highimpedanceinputswhendisabledorpowered-down •Lowpowerdis

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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