1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li

文件：220.01 Kbytes 页数：12 Pages

Maxim

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1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：211 Kbytes 页数：12 Pages

Dallas

1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：211 Kbytes 页数：12 Pages

Dallas

1024K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c

文件：219.44 Kbytes 页数：9 Pages

Dallas

1024K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c

文件：219.44 Kbytes 页数：9 Pages

Dallas

1024K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c

文件：219.44 Kbytes 页数：9 Pages

Dallas

1024K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c

文件：219.44 Kbytes 页数：9 Pages

Dallas

1024K Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c

文件：219.44 Kbytes 页数：9 Pages

Dallas

3.3V 1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a

文件：249.84 Kbytes 页数：12 Pages

Dallas

3.3V 1024k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a

文件：249.84 Kbytes 页数：12 Pages

Dallas