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DS1330Y-100	文件：211 Kbytes Page：12 Pages	1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas
DS1330Y-100	文件：228.66 Kbytes Page：12 Pages	4096kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas

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DS1330Y-100

文件：211 Kbytes

Page：12 Pages

1024kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

Dallas

DS1330Y-100

文件：228.66 Kbytes

Page：12 Pages

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亚德诺亚德诺半导体

Dallas

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