3.3V 4096k Nonvolatile SRAM

FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns

文件：217.37 Kbytes 页数：11 Pages

DALLAS

Package：34-PowerCap™ 模块；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 4MBIT PAR 34PWRCAP

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亚德诺

3.3V 4096k Nonvolatile SRAM

FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns

文件：217.37 Kbytes 页数：11 Pages

DALLAS

DIP-32

ADI(亚德诺)/MAXIM(美信)

上传：深圳市宇创芯科技有限公司

DIP-32

ADI(亚德诺)/MAXIM(美信)

上传：深圳市宇创芯科技有限公司