DRV8363-Q1中文资料具有电流分流放大器的汽车级 85V（最大值）三相智能栅极驱动器数据手册TI规格书

描述 Description

The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

特性 Features

AEC-Q100 Test Guidance for automotive applications

Device ambient temperature: –40°C to +125°C



Three phase half-bridge gate driver

Drives six N-channel MOSFETs (NMOS)

8 to 85V wide operating voltage range

Bootstrap architecture for high-side gate driver

Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz

Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit



Smart Gate Drive architecture

15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)

Closed-loop automatic deadtime insertion based on gate-source voltage monitoring

Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown



Low-side Current Sense Amplifier

1mV low input offset across temperature

4-level adjustable gain

Adjustable output bias to support unidirectional or bidirectional sensing



SPI-based detailed configuration and diagnostics

DRVOFF pin to disable driver independently

High voltage wake up pin (nSLEEP)

Dedicated ASCIN pin to control motor braking (active short circuit)

6x, 3x, 1x, and Independent PWM Modes

Supports 3.3V and 5V Logic Inputs

Integrated protection features

Battery and power supply voltage monitors

MOSFET VDS and Rsense over current monitors

MOSFET VGS gate fault monitors

Device thermal warning and shutdown

Fault condition indicator pin