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DRV8353HM

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件:3.18085 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HM

DRV8353M 100-V Three-Phase Smart Gate Driver

文件:3.15245 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTAT

丝印:DRV8353HM;Package:WQFN(RTA);DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件:3.18085 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTAT.A

丝印:DRV8353HM;Package:WQFN(RTA);DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件:3.18085 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTATG4

丝印:DRV8353HM;Package:WQFN(RTA);DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件:3.18085 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTATG4.A

丝印:DRV8353HM;Package:WQFN(RTA);DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

文件:3.18085 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTAT

丝印:DRV8353HM;Package:WQFN;DRV8353M 100-V Three-Phase Smart Gate Driver

文件:3.15245 Mbytes 页数:76 Pages

TI

德州仪器

DRV8353HMRTAT

Package:40-WFQFN 裸露焊盘;包装:管件 功能:控制器 - 换向,方向管理 类别:集成电路(IC) 电机驱动器,控制器 描述:100-V THREE-PHASE SMART GATE DRI

TI

德州仪器

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
2021+
WQFN-40
499
询价
TI
23+
N/A
560
原厂原装
询价
TI
25+
WQFN (RTA)
6000
原厂原装,价格优势
询价
TI(德州仪器)
2022+原装正品
WQFN-40
18000
支持工厂BOM表配单 公司只做原装正品货
询价
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
TI(德州仪器)
23+
WQFN-40
13650
公司只做原装正品,假一赔十
询价
Texas Instruments
25+
40-WFQFN 裸露焊盘
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
9999
询价
TI/德州仪器
25+
原厂封装
10280
询价
更多DRV8353HM供应商 更新时间2026-1-24 8:40:00