丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器

丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器

丝印：DRV8329A；Package：WQFN；DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

丝印：D8329AQ；Package：VQFN；DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.2972 Mbytes 页数：57 Pages

TI

德州仪器

丝印：D8329AQ；Package：VQFN；DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 页数：58 Pages

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

文件：3.16376 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.2972 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 页数：58 Pages

TI

德州仪器