CMDZ2L8

Marking：DP；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

ES3DP

Marking：DP；Package：CFP5；200 V, 3 A hyperfast PN-rectifier

1.Generaldescription Highpowerdensity,hyperfastPN-rectifierwithhigh-efficiencyplanartechnology,encapsulatedina smallandflatleadCFP5(SOD128)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •ReversevoltageVR≤200V •ForwardcurrentIF≤3A •Hyp

MM3Z39VT1G

Marking：DP；Package：SOD323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaverysmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:Approximately±5 •Wid

MMBZ4704-V

Marking：DP；Package：SOT-23；Small Signal Zener Diodes

FEATURES •SiliconplanarZenerdiodes •StandardZenervoltagetoleranceis±5.Othertolerancesareavailableuponrequest •ThesediodesarealsoavailableinDO-35casewiththetypedesignation1N4681to1N4717andSOD-123casewiththetypedesignationMMSZ4681-VtoMMSZ4717-V •AEC-Q1

MMSZ4704

Marking：DP；Package：SOD-123；ZENER DIODE

Features ·LowZenerImpedance ·PowerDissipationof500mW ·HighStabilityandHighReliability

MMSZ4704T1G

Marking：DP；Package：SOD-123；Zener Voltage Regulators 500 mW, Low IZT SOD-123 Surface Mount

ThreecompleteseriesofZenerdiodesareofferedintheconvenient, surfacemountplasticSOD−123package.Thesedevicesprovidea convenientalternativetotheleadless34−packagestyle. Features •500mWRatingonFR−4orFR−5Board •WideZenerReverseVoltageRange−1.8Vto43V •L

P6SMB120C

Marking：DP；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

PDTA143ZM

Marking：DP；Package：SC-101；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PDTA143ZM

Marking：DP；Package：SOT-883；PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

SM6T10A

Marking：DP；Package：SMB；600Watts Surface Mount TVS

DESCRIPTION Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedIC’s. FEATURES ■PEAKPULSEPOWER:600W