首页 >DP-562>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CURRENTREGULATORDIODES CURRENTREGULATORDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
CURRENTREGULATIVEDIODE | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
FeaturesReceiverThree-StateOutputsLowSupplyCurrent:1mATypical | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
Transceivers | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
ESD56212VBi-DirectionalESDProtectioninSOT-23 1Features •IEC61000-4-5surgeprotection: –3.5A(8/20μs) •IEC61000-4-2ESDprotection: –±22kVcontactdischarge –±30kVairgapdischarge •12Vworkingvoltage •IOcapacitance: –1.5pF(typical) •Bidirectionalpolaritytosupportpositiveand negativevoltageswings •2channel | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
ESD562-Q112VBi-DirectionalESDProtectioninSOT-23 1Features •IEC61000-4-5surgeprotection: –3A(8/20μs) •IEC61000-4-2ESDprotection: –±22kVcontactdischarge –±22kVairgapdischarge •12Vworkingvoltage •IOcapacitance: –1.5pF(typical) •Bidirectionalpolaritytosupportpositiveand negativevoltageswings •2channeld | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
ESD56212VBi-DirectionalESDProtectioninSOT-23 1Features •IEC61000-4-5surgeprotection: –3.5A(8/20μs) •IEC61000-4-2ESDprotection: –±22kVcontactdischarge –±30kVairgapdischarge •12Vworkingvoltage •IOcapacitance: –1.5pF(typical) •Bidirectionalpolaritytosupportpositiveand negativevoltageswings •2channel | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
HIGHPOWERTWINRELAY1POLEx2-30A | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu | ||
HIGHPOWERTWINRELAY1POLEx2-30A(FORAUTOMOTIVEAPPLICATIONS) | FujitsuFujitsu Component Limited. 富士通富士通株式会社 | Fujitsu | ||
PowerSwitchwithOver | GMTGlobal Mixed-mode Technology Inc 致新科技 | GMT |
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