丝印：DP%；Package：TO-236AB；20 V, P-channel Trench MOSFET

文件：271.6 Kbytes 页数：15 Pages

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丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power amplifier ap

文件：354.04 Kbytes 页数：2 Pages

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无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli

文件：353.28 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

文件：262.5 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid o

文件：373.8 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistors

DESCRIPTION • Low Collector Saturation Voltage • High Power Dissipation- : PC= 10W(Max)@TC=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in audio amplifier and switching, especially in hybrid integrated cir

文件：273.9 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SD1286-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

文件：303.17 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC= 300mA • High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min) • Complement to Type 2SA1400-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

文件：285.61 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

文件：248.39 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • High collector-emitter voltage • Low collector saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching.

文件：301.3 Kbytes 页数：2 Pages

ISC

无锡固电