80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Wettable Flank for Improved O

文件：748.07 Kbytes 页数：7 Pages

DIODES

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丝印：TH8003STL；Package：POWERDI1012-8；80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Wettable Flank for Improved O

文件：748.07 Kbytes 页数：7 Pages

DIODES

美台半导体

80V 175°C N-Channel Enhancement Mode MOSFET

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Diodes

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80V 175°C Dual N-Channel Enhancement Mode MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, power managements.

Diodes

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