80V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch.  DC-DC Converters  Load Switch Features  100 Unclamped Inductive Switching (UIS) Test

文件：382.89 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T8008SPS；Package：PowerDI5060-8；80V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch.  DC-DC Converters  Load Switch Features  100 Unclamped Inductive Switching (UIS) Test

文件：382.89 Kbytes 页数：7 Pages

DIODES

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Den

文件：467.24 Kbytes 页数：7 Pages

DIODES

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features and Ben

文件：467.46 Kbytes 页数：7 Pages

DIODES

美台半导体

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent Qgd × RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher D

文件：467.37 Kbytes 页数：7 Pages

DIODES

美台半导体