ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

文件：548.31 Kbytes 页数：10 Pages

DIODES

美台半导体

ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

文件：548.31 Kbytes 页数：10 Pages

DIODES

美台半导体

ASYMMETRIC DUAL N-CHANNEL MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output L

文件：548.31 Kbytes 页数：10 Pages

DIODES

美台半导体

Asymmetric Dual N-Channel MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Diodes

美台半导体